|
Technical Index
|
||
|
No.
|
Item
|
2 Inch Sapphire Substrate Wafer
|
|
1
|
Material
|
High Purity(>99.996%) And Monocrystalline Al2O3
|
|
2
|
Orientation
|
C-Plane Tiled 0.2°±0.1°Towards M-axis
|
|
3
|
Primary Flat Location
|
A-Plane 0±0.2°
|
|
4
|
Diameter
|
50.80±0.15um
|
|
5
|
Thickness
|
430±15um
|
|
6
|
Primary Flat Location
|
16±1.0nm
|
|
7
|
TTV
|
≤10um
|
|
8
|
LTV
|
≤3um
|
|
9
|
BOW
|
-10～0um
|
|
10
|
WARP
|
≤15um
|
|
11
|
Front Side Surface
|
Epi-ready Polished
|
|
12
|
Front side Surface Roughness
|
Ra≤0.3nm
|
|
13
|
Back side Surface Roughness
|
0.8≤Ra≤1.2um
|
|
14
|
Wafer Edge
|
R-Type
|
|
15
|
Laser Mark
|
Frontside/Backside
|
|
16
|
Surface Quality
|
Free Of Foreign Materials,Crack,Sawmark,Chippings
|
|
17
|
Package
|
Clean Room,25 Pcs Epi-Ready In One Cassette
|
